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The BLF574XRS,112 is a 600 W extremely rugged LDMOS power transistor designed for broadcast and industrial applications in the HF to 500 MHz band. It utilizes Ampleon's XR process to provide maximum ruggedness capability without compromising RF performance. The device operates with a drain-source voltage of up to 110 V and features a junction temperature rating of 225 °C. At 225 MHz with a 50 V supply and 100 mA quiescent current, it delivers 600 W output power with a typical drain efficiency of 74.5% and power gain of 23.5 dB. The component is housed in an earless flanged ceramic package (SOT1214B) with four leads.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package configuration. Confirm that the required RoHS compliance status aligns with project specifications. Check for any export control regulations applicable to this component before finalizing procurement orders.
Select the BLF574XRS variant when an earless flanged ceramic package is required for mounting. Ensure the design accommodates the 225 °C maximum junction temperature and utilizes appropriate heat sinking. Verify impedance matching networks for the target frequency within the HF to 500 MHz band to maintain specified gain and efficiency levels.
This component is part of the BLF574XR series, representing an enhanced version of the standard BLF574 transistor. The series leverages advanced LDMOS technology to deliver high power density and reliability in demanding RF environments. It serves as a critical active element in high-power amplifier stages for broadcast and industrial systems.
The BLF574XR is the primary related part number within the same family, differing primarily in package style.