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The BLF647P is a 200 W LDMOS RF power transistor designed for broadcast and industrial applications across the HF to 1500 MHz frequency range. It features excellent ruggedness, high power gain, and high efficiency, making it suitable for digital modulation schemes. The device operates with a drain-source voltage of up to 65 V and delivers 200 W output power at 1300 MHz in Class-B operation. Key electrical parameters include a typical power gain of 18 dB, drain efficiency of 70%, and a thermal resistance from junction to case of 0.34 K/W.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package version and compliance status. Confirm that the component meets RoHS Directive 2002/95/EC requirements if applicable to your design specifications. Always consult the latest product data sheet for any updates on limiting values or recommended operating conditions before finalizing procurement orders.
Select this component for broadband RF power amplifier designs requiring high linearity and robust performance under load mismatch conditions. Ensure the thermal management system can maintain the junction temperature within the specified limits during continuous wave operation. Verify that the gate-source voltage and drain-source voltage ratings align with the intended biasing circuitry and supply rails.
The BLF647P belongs to Ampleon's portfolio of broadband power LDMOS transistors. It is housed in a flanged LDMOST ceramic package (SOT1121A) featuring two mounting holes and four leads. This packaging facilitates efficient heat dissipation and secure mechanical mounting, which are critical for maintaining reliability in high-power RF transmitter environments.
BLF647PS