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The BLF6G05LS-200RN is a 200 W LDMOS power transistor designed for base station applications in the 460 MHz to 470 MHz frequency range. It utilizes an earless flanged SOT502B ceramic package with two leads and features integrated ESD protection. Typical performance at 460–470 MHz, 28 V supply, and 1400 mA quiescent current includes 40 W average output power, 24 dB power gain, 33% drain efficiency, and -43 dBc ACPR. The device supports enhanced ruggedness, capable of withstanding a VSWR of 10:1 through all phases under specified conditions.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and handling specifications. Ensure compliance with RoHS directives as stated in the product data sheet. Confirm that the component status remains active before initiating procurement processes.
Select this component for broadband RF power amplifier designs operating between 460 MHz and 470 MHz. Verify thermal management requirements based on the junction-to-case thermal resistance of 0.33 K/W. Ensure the application circuit accommodates the specified gate-source voltage limits and provides adequate heat sinking for the flanged ceramic package.
This part belongs to the BLF series of LDMOS power transistors manufactured by Ampleon USA Inc., originally developed under NXP Semiconductors. The BLF6G05LS-200RN specifically targets cellular infrastructure frequencies, providing high power density and efficiency for modern wireless communication standards.
Consult the manufacturer's official replacement guide or cross-reference list for verified substitute part numbers. Do not assume functional equivalence with other BLF series devices without verifying pinout, electrical parameters, and package dimensions.