BLF6G05LS-200RN,11

BLF6G05LS-200RN,11

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-

SKU:651a360dce8a Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:460MHz ~ 470MHz
  • Gain:24dB
  • Voltage - Test:28 V
  • Current Rating (Amps):49A
  • Noise Figure:-
  • Current - Test:1.4 A
  • Power - Output:40W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502B
  • Supplier Device Package:SOT502B
  • Configuration:-

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BLF6G05LS-200RN,11

Overview

The BLF6G05LS-200RN is a 200 W LDMOS power transistor designed for base station applications in the 460 MHz to 470 MHz frequency range. It utilizes an earless flanged SOT502B ceramic package with two leads and features integrated ESD protection. Typical performance at 460–470 MHz, 28 V supply, and 1400 mA quiescent current includes 40 W average output power, 24 dB power gain, 33% drain efficiency, and -43 dBc ACPR. The device supports enhanced ruggedness, capable of withstanding a VSWR of 10:1 through all phases under specified conditions.

Feature Summary

  • Internally matched for ease of use
  • Enhanced ruggedness for load mismatch tolerance
  • Integrated ESD protection

Applications

  • RF power amplifiers for W-CDMA base stations
  • RF power amplifiers for CDMA base stations
  • Multicarrier applications in the 460 MHz to 470 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and handling specifications. Ensure compliance with RoHS directives as stated in the product data sheet. Confirm that the component status remains active before initiating procurement processes.

Selection Notes

Select this component for broadband RF power amplifier designs operating between 460 MHz and 470 MHz. Verify thermal management requirements based on the junction-to-case thermal resistance of 0.33 K/W. Ensure the application circuit accommodates the specified gate-source voltage limits and provides adequate heat sinking for the flanged ceramic package.

Part Context

This part belongs to the BLF series of LDMOS power transistors manufactured by Ampleon USA Inc., originally developed under NXP Semiconductors. The BLF6G05LS-200RN specifically targets cellular infrastructure frequencies, providing high power density and efficiency for modern wireless communication standards.

Replacement Considerations

Consult the manufacturer's official replacement guide or cross-reference list for verified substitute part numbers. Do not assume functional equivalence with other BLF series devices without verifying pinout, electrical parameters, and package dimensions.

BLF6G05LS-200RN,11BLF6G05LS-200RN,11

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