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The BLF6G10-135RN is a 135 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1000 MHz. It features an internally matched SOT502A flanged ceramic package with two mounting holes and two leads. The device operates at a drain-source voltage of 28 V, delivering an average output power of 26.5 W in a typical 2-carrier W-CDMA configuration. Key electrical parameters include a power gain of 21.0 dB, drain efficiency of 28.0%, and an adjacent channel power ratio (ACPR) of -39 dBc.
Verify the specific package variant required before ordering. The standard BLF6G10-135RN utilizes the SOT502A flanged package with mounting holes. The BLF6G10LS-135RN variant uses the SOT502B earless flanged package. Confirm that the selected component matches the mechanical constraints of the intended heat sink or chassis mounting design.
Select this component for high-power RF amplifier designs requiring robust performance across the 700 MHz to 1000 MHz spectrum. Ensure the application circuit provides adequate thermal management, as the junction temperature can reach up to 225 °C. Verify that the load impedance remains within the specified VSWR limits to maintain device ruggedness during class-AB operation.
This part belongs to the Ampleon BLF6G10 series of LDMOS power transistors. The suffix 'RN' indicates the standard flanged package version (SOT502A). The 'LS' variant denotes an earless flanged package (SOT502B). Both variants share identical electrical characteristics but differ mechanically in their mounting configurations.
The BLF6G10LS-135RN serves as a direct mechanical alternative if an earless flange is required. For other replacements, verify matching power ratings, frequency ranges, and package dimensions against the original design specifications.