BLF6G10-135RN,112

BLF6G10-135RN,112

  • Description:RF MOSFET LDMOS 28V SOT502A
  • Series:-

SKU:c5e1cd292166 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:871.5MHz ~ 891.5MHz
  • Gain:21dB
  • Voltage - Test:28 V
  • Current Rating (Amps):32A
  • Noise Figure:-
  • Current - Test:950 mA
  • Power - Output:26.5W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLF6G10-135RN,112

Overview

The BLF6G10-135RN is a 135 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1000 MHz. It features an internally matched SOT502A flanged ceramic package with two mounting holes and two leads. The device operates at a drain-source voltage of 28 V, delivering an average output power of 26.5 W in a typical 2-carrier W-CDMA configuration. Key electrical parameters include a power gain of 21.0 dB, drain efficiency of 28.0%, and an adjacent channel power ratio (ACPR) of -39 dBc.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation from 700 MHz to 1000 MHz

Applications

  • RF power amplifiers for GSM base stations
  • RF power amplifiers for GSM EDGE base stations
  • RF power amplifiers for W-CDMA base stations
  • RF power amplifiers for CDMA base stations
  • Multi-carrier applications in the 700 MHz to 1000 MHz frequency range

Procurement Notes

Verify the specific package variant required before ordering. The standard BLF6G10-135RN utilizes the SOT502A flanged package with mounting holes. The BLF6G10LS-135RN variant uses the SOT502B earless flanged package. Confirm that the selected component matches the mechanical constraints of the intended heat sink or chassis mounting design.

Selection Notes

Select this component for high-power RF amplifier designs requiring robust performance across the 700 MHz to 1000 MHz spectrum. Ensure the application circuit provides adequate thermal management, as the junction temperature can reach up to 225 °C. Verify that the load impedance remains within the specified VSWR limits to maintain device ruggedness during class-AB operation.

Part Context

This part belongs to the Ampleon BLF6G10 series of LDMOS power transistors. The suffix 'RN' indicates the standard flanged package version (SOT502A). The 'LS' variant denotes an earless flanged package (SOT502B). Both variants share identical electrical characteristics but differ mechanically in their mounting configurations.

Replacement Considerations

The BLF6G10LS-135RN serves as a direct mechanical alternative if an earless flange is required. For other replacements, verify matching power ratings, frequency ranges, and package dimensions against the original design specifications.

BLF6G10-135RN,112BLF6G10-135RN,112

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