BLF6G10-160RN,112

Overview

The BLF6G10-160RN is a 160 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It features an internally matched SOT502A flanged ceramic package with two mounting holes and two leads. The device operates at a drain-source voltage of 32 V, delivering an average output power of 32 W in typical 2-carrier W-CDMA performance. Key electrical parameters include a power gain of 22.5 dB, drain efficiency of 27%, and an adjacent channel power ratio (ACPR) of -41 dBc under specified test conditions.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation (700 MHz to 1000 MHz)

Applications

• RF power amplifiers for GSM base stations
• RF power amplifiers for GSM EDGE base stations
• RF power amplifiers for W-CDMA base stations
• RF power amplifiers for CDMA base stations
• Multi carrier applications in the 700 MHz to 1000 MHz frequency range

Procurement Notes

Verify the specific package variant required before ordering. The BLF6G10-160RN corresponds to the SOT502A flanged ceramic package with two mounting holes. Ensure compatibility with existing mounting hardware and thermal interface materials. Confirm RoHS compliance requirements align with Directive 2002/95/EC standards during procurement planning.

Selection Notes

Select this component for wideband RF power amplifier designs operating between 700 MHz and 1000 MHz. The internal matching network simplifies circuit design compared to unmated transistors. Evaluate thermal management capabilities based on the junction-to-case thermal resistance values provided in the datasheet to ensure reliable operation within the specified temperature limits.

Part Context

This part belongs to the BLF6G10 series of LDMOS power transistors manufactured by Ampleon USA Inc. The 'RN' suffix typically denotes the specific packaging and handling configuration. It is engineered for high-power cellular infrastructure, providing robust performance across multiple wireless communication standards within its designated frequency band.

Replacement Considerations

BLF6G10LS-160RN

FAQ

What is the maximum load mismatch the device can withstand?

The device can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specific CW operating conditions.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case is 0.5 K/W for the BLF6G10-160RN (SOT502A) version.

Is the device sensitive to electrostatic discharge?

Yes, the device is sensitive to ElectroStatic Discharge (ESD), requiring care during transport and handling.