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The BLF6G10-45 is a 45 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It features an internally matched design and integrated ESD protection within a flanged ceramic SOT608A package. Typical performance at 920 MHz to 960 MHz with a 28 V supply and 350 mA quiescent current includes 1.0 W average output power, 22.5 dB gain, 7.8% efficiency, and -48.5 dBc ACPR under 2-carrier W-CDMA conditions. The device supports a maximum drain-source voltage of 65 V and operates up to a junction temperature of 225 °C.
Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Ensure that the procurement channel provides valid traceability and authenticity guarantees for RF power components. Confirm compliance with relevant environmental directives prior to finalizing orders.
Select this component for designs requiring high power density and ruggedness in UHF base station environments. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify that the application circuit can maintain the required load mismatch tolerance during class-AB operation.
This part belongs to the BLF6G series of LDMOS power transistors manufactured by Ampleon USA Inc. The series targets wireless communication infrastructure, specifically focusing on wideband coverage for cellular network deployments.
Consult official Ampleon substitution guides for verified alternatives. Do not assume functional equivalence with other manufacturers' devices without comprehensive electrical and mechanical validation.
The BLF6G10-45 can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified CW operating conditions.
The typical gate-source threshold voltage is 1.9 V, with a minimum of 1.35 V and a maximum of 2.35 V.
No, unless expressly stated otherwise, this product is not automotive qualified and is not suitable for automotive equipment or applications.