BLF6G10-45,135

BLF6G10-45,135

  • Description:RF MOSFET LDMOS 28V CDFM2
  • Series:-

SKU:18a9c2056c3e Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:922.5MHz ~ 957.5MHz
  • Gain:22.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):13A
  • Noise Figure:-
  • Current - Test:350 mA
  • Power - Output:1W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-608A
  • Supplier Device Package:CDFM2
  • Configuration:-

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BLF6G10-45,135

Overview

The BLF6G10-45 is a 45 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It features an internally matched design and integrated ESD protection within a flanged ceramic SOT608A package. Typical performance at 920 MHz to 960 MHz with a 28 V supply and 350 mA quiescent current includes 1.0 W average output power, 22.5 dB gain, 7.8% efficiency, and -48.5 dBc ACPR under 2-carrier W-CDMA conditions. The device supports a maximum drain-source voltage of 65 V and operates up to a junction temperature of 225 °C.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (700 MHz to 1000 MHz)

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi carrier applications in the 700 MHz to 1000 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Ensure that the procurement channel provides valid traceability and authenticity guarantees for RF power components. Confirm compliance with relevant environmental directives prior to finalizing orders.

Selection Notes

Select this component for designs requiring high power density and ruggedness in UHF base station environments. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify that the application circuit can maintain the required load mismatch tolerance during class-AB operation.

Part Context

This part belongs to the BLF6G series of LDMOS power transistors manufactured by Ampleon USA Inc. The series targets wireless communication infrastructure, specifically focusing on wideband coverage for cellular network deployments.

Replacement Considerations

Consult official Ampleon substitution guides for verified alternatives. Do not assume functional equivalence with other manufacturers' devices without comprehensive electrical and mechanical validation.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF6G10-45 can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified CW operating conditions.

What is the typical gate-source threshold voltage?

The typical gate-source threshold voltage is 1.9 V, with a minimum of 1.35 V and a maximum of 2.35 V.

Is the device suitable for automotive applications?

No, unless expressly stated otherwise, this product is not automotive qualified and is not suitable for automotive equipment or applications.

BLF6G10-45,135BLF6G10-45,135

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