BLF6G10L-40BRN,118

BLF6G10L-40BRN,118

  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-

SKU:9c5395eb87d3 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM6
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:788.5MHz ~ 823.5MHz
  • Gain:23dB
  • Voltage - Test:28 V
  • Current Rating (Amps):11A
  • Noise Figure:-
  • Current - Test:390 mA
  • Power - Output:2.5W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1112A
  • Supplier Device Package:CDFM6
  • Configuration:Dual, Common Source

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BLF6G10L-40BRN,118

Overview

The BLF6G10L-40BRN is a 40 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1 GHz. It features an internally matched design within a flanged ceramic SOT1112A package, supporting broadband operation from 728 MHz to 960 MHz. The device operates at a drain-source voltage of 28 V with a breakdown voltage of 65 V. In typical two-carrier W-CDMA performance at 791 MHz and 821 MHz, it delivers 2.5 W average output power with 23.0 dB gain, 15.0% efficiency, and -42.5 dBc ACPR.

Feature Summary

  • Internally matched for simplified circuit integration
  • Integrated electrostatic discharge (ESD) protection
  • Enhanced ruggedness capable of withstanding high VSWR mismatches
  • Integrated current sense functionality

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier GSM applications in the 728 MHz to 960 MHz range
  • LTE applications in the 728 MHz to 960 MHz range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and ensure the component meets the required environmental operating temperatures before finalizing procurement orders.

Selection Notes

Select this component for base station designs requiring broadband coverage across the 728 MHz to 960 MHz spectrum. Ensure the application supports a 28 V supply voltage and accommodates the thermal requirements associated with the flanged ceramic package for effective heat dissipation.

Part Context

This part belongs to the Ampleon LDMOS power transistor family, specifically engineered for wireless infrastructure. It utilizes lateral diffused metal-oxide semiconductor technology to provide high linearity and efficiency for multi-carrier modulation schemes used in modern cellular networks.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-referencing requires matching pinout configurations, electrical ratings, and package dimensions to ensure compatibility without redesigning the host circuit board.

BLF6G10L-40BRN,118BLF6G10L-40BRN,118

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