SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF6G10L-40BRN is a 40 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1 GHz. It features an internally matched design within a flanged ceramic SOT1112A package, supporting broadband operation from 728 MHz to 960 MHz. The device operates at a drain-source voltage of 28 V with a breakdown voltage of 65 V. In typical two-carrier W-CDMA performance at 791 MHz and 821 MHz, it delivers 2.5 W average output power with 23.0 dB gain, 15.0% efficiency, and -42.5 dBc ACPR.
Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and reel specifications. Confirm RoHS compliance status and ensure the component meets the required environmental operating temperatures before finalizing procurement orders.
Select this component for base station designs requiring broadband coverage across the 728 MHz to 960 MHz spectrum. Ensure the application supports a 28 V supply voltage and accommodates the thermal requirements associated with the flanged ceramic package for effective heat dissipation.
This part belongs to the Ampleon LDMOS power transistor family, specifically engineered for wireless infrastructure. It utilizes lateral diffused metal-oxide semiconductor technology to provide high linearity and efficiency for multi-carrier modulation schemes used in modern cellular networks.
Consult official Ampleon substitution guides for verified replacements. Cross-referencing requires matching pinout configurations, electrical ratings, and package dimensions to ensure compatibility without redesigning the host circuit board.