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The BLF6G10LS-135R,118 is a 135 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1000 MHz. It features an earless flanged SOT502B package with two leads. The device supports a maximum drain-source voltage of 65 V and a junction temperature up to 225 °C. In typical 2-carrier W-CDMA operation at 869 MHz to 894 MHz with a 28 V supply and 950 mA quiescent current, it delivers 26.5 W average output power, 21.0 dB gain, 28.0% efficiency, and -39 dBc ACPR.
Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and reel specifications. Ensure that the procurement channel provides valid traceability for this active component. Confirm RoHS compliance status directly from the manufacturer's latest release notes before finalizing orders.
Select the BLF6G10LS-135R,118 variant when an earless flanged SOT502B package is required for the design. Verify thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the application operates within the 700 MHz to 1000 MHz broadband range to utilize the internal matching network effectively.
This component belongs to the BLF6G10 series of power LDMOS transistors manufactured by Ampleon. The LS designation specifically indicates the earless flanged ceramic package configuration (SOT502B), distinguishing it from the standard flanged version which includes mounting holes. This series targets high-efficiency RF power amplifier designs for cellular infrastructure.
The BLF6G10-135RN serves as the primary alternative within the same product family. It utilizes the SOT502A package, which differs physically due to the inclusion of two mounting holes compared to the earless design of the LS variant. Verify mechanical footprint compatibility before substitution.