BLF6G10LS-135RN,11

Overview

The Ampleon BLF6G10LS-135RN,11 is a 135 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It operates with a drain-source voltage of 28 V and quiescent current of 950 mA. Typical performance at 869 MHz to 894 MHz includes an average output power of 26.5 W, power gain of 21.0 dB, efficiency of 28.0%, and ACPR of -39 dBc. The device features a thermal resistance from junction to case of 0.56 K/W at 25 W dissipation. It utilizes the SOT502B earless flanged ceramic package.

Feature Summary

• Internally matched for ease of use
• Enhanced ruggedness capable of withstanding VSWR = 10:1 through all phases
• Integrated ESD protection
• Excellent thermal stability

Applications

• RF power amplifiers for GSM base stations
• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications in the 700 MHz to 1000 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact package variant. Confirm that the component status remains active before initiating design-in processes. Ensure compliance with RoHS Directive 2002/95/EC requirements as stated in the product data sheet.

Selection Notes

Select this component for broadband operations between 700 MHz and 1000 MHz requiring high efficiency and ruggedness. Verify thermal management capabilities align with the specified junction-to-case thermal resistance. Ensure the application circuit supports the required 28 V supply voltage and appropriate gate biasing conditions.

Part Context

This part belongs to the BLF6G10 series of power LDMOS transistors manufactured by Ampleon. The LS designation indicates the earless flanged ceramic package (SOT502B), distinguishing it from the standard flanged version (SOT502A). These devices are engineered specifically for demanding RF power amplifier environments.

Replacement Considerations

The BLF6G10-135RN serves as a direct alternative within the same family, utilizing the SOT502A package instead of the SOT502B configuration used by the BLF6G10LS-135RN.

FAQ

What is the maximum load mismatch the device can withstand?

The device can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.

Does the device include electrostatic discharge protection?

Yes, the BLF6G10LS-135RN features integrated ESD protection.

What is the typical power gain at 26.5 W average output power?

The typical power gain is 21.0 dB when operating at an average output power of 26.5 W.