BLF6G10LS-160RN,11

Overview

The BLF6G10LS-160RN,11 is a 160 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It features an earless flanged SOT502B ceramic package with two leads and integrated ESD protection. Typical performance at 920 MHz to 960 MHz includes 32 W average output power, 22.5 dB power gain, 27% drain efficiency, and -41 dBc ACPR under 2-carrier W-CDMA conditions (VDS = 32 V, IDq = 1200 mA). The device exhibits excellent ruggedness, supporting a VSWR of 10:1 through all phases at 160 W CW. Thermal resistance from junction to case is 0.44 K/W.

Feature Summary

• Internally matched for ease of use
• Designed for broadband operation across 700 MHz to 1000 MHz
• Integrated ESD protection
• Excellent thermal stability

Applications

• RF power amplifiers for GSM and GSM EDGE base stations
• W-CDMA and CDMA base station power amplifiers
• Multi-carrier applications in the 700 MHz to 1000 MHz range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm that the component meets RoHS Directive 2002/95/EC requirements before integration. Ensure handling procedures account for electrostatic discharge sensitivity during transport and assembly.

Selection Notes

Select this component for high-efficiency RF power amplifier designs operating between 700 MHz and 1000 MHz. Verify that the application circuit can maintain the recommended quiescent current and supply voltage. Ensure adequate thermal management is provided to keep the junction temperature within the specified maximum limit.

Part Context

This part belongs to the BLF6G10 series of LDMOS power transistors manufactured by Ampleon USA Inc. The LS variant specifically denotes the earless flanged SOT502B package, distinguishing it from the standard flanged version. It is engineered for robust performance in demanding cellular infrastructure environments.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, electrical parameters, and package dimensions.

FAQ

What is the maximum load mismatch the device can withstand?

The device can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

Does the BLF6G10LS-160RN require external matching networks?

No, the transistor is internally matched for ease of use.

What is the thermal resistance from junction to case?

The thermal resistance from junction to case is 0.44 K/W.