BLF6G10LS-200RN

Overview

The Ampleon BLF6G10LS-200RN is a 200 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It operates at a drain-source voltage of 65 V and features an internal matching network for ease of use. Typical performance at 869 MHz to 894 MHz with a 28 V supply includes 40 W average output power, 20 dB power gain, 28.5% efficiency, and -39 dBc ACPR. The device utilizes an earless flanged ceramic package (SOT502B) with two leads.

Feature Summary

• Enhanced ruggedness capable of withstanding high load mismatch conditions
• High efficiency and excellent thermal stability for broadband operation
• Integrated ESD protection and internally matched design

Applications

• RF power amplifiers for GSM and GSM EDGE base stations
• W-CDMA and CDMA base station power amplifiers
• Multicarrier applications in the 700 MHz to 1000 MHz range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status as per the latest product data sheet revision before finalizing procurement specifications.

Selection Notes

Select this component for wideband RF power amplifier designs requiring high linearity and ruggedness. Ensure the application circuit supports the specified 28 V operating voltage and provides adequate thermal management for the case temperature requirements.

Part Context

This part belongs to the BLF6G10 series of LDMOS transistors from Ampleon. It shares similar electrical characteristics with the BLF6G10-200RN but differs in physical packaging, utilizing the SOT502B earless flanged ceramic package instead of the standard flanged version.

Replacement Considerations

BLF6G10-200RN