BLF6G10LS-200RN:11

Overview

The BLF6G10LS-200RN:11 is a 200 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It operates at a supply voltage of 28 V with a drain-source breakdown voltage of 65 V and a maximum junction temperature of 225 °C. In typical 2-carrier W-CDMA operation, it delivers an average output power of 40 W with a power gain of 20 dB and a drain efficiency of 28.5 %. The device features enhanced ruggedness capable of withstanding a VSWR of 10:1 and includes integrated ESD protection.

Feature Summary

• Designed for broadband operation across the 700 MHz to 1000 MHz spectrum
• Enhanced ruggedness supporting high load mismatch conditions
• Integrated electrostatic discharge (ESD) protection
• Internally matched for simplified circuit integration

Applications

• RF power amplifiers for GSM and GSM EDGE base stations
• W-CDMA base station power amplification
• CDMA base station power amplification
• Multicarrier applications within the 700 MHz to 1000 MHz band

Procurement Notes

Verify the specific ordering suffix :11 against official Ampleon documentation to confirm packaging details. Confirm current product status as this component may be subject to discontinuation notices or production changes documented by the manufacturer.

Selection Notes

Select this component for wideband base station designs requiring high thermal stability and efficient power handling. Ensure the application environment supports the specified 28 V supply and that adequate heat sinking is provided to maintain the case temperature within operational limits.

Part Context

This part belongs to the BLF6G10 series of LDMOS transistors manufactured by Ampleon USA Inc. The LS variant utilizes the SOT502B earless flanged ceramic package, distinguishing it from the standard flanged version. It serves as a specialized RF power solution for telecommunications infrastructure.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference electrical parameters such as breakdown voltage, thermal resistance, and package dimensions before considering alternative components.