BLF6G10LS-200RN,11

Overview

The Ampleon BLF6G10LS-200RN,112 is a 200 W LDMOS power transistor designed for base station applications in the 700 MHz to 1000 MHz frequency range. It operates with a drain-source voltage of 28 V and features an internal matching network for ease of use. Typical performance at 869 MHz to 894 MHz includes an average output power of 40 W, a power gain of 20 dB, and a drain efficiency of 28.5%. The device exhibits enhanced ruggedness, capable of withstanding a VSWR of 10:1 under specified conditions. It utilizes an earless flanged ceramic package (SOT502B) with two leads.

Feature Summary

• Internally matched for simplified circuit design
• Enhanced ruggedness for load mismatch tolerance
• Integrated ESD protection
• Excellent thermal stability

Applications

• RF power amplifiers for GSM base stations
• W-CDMA base station power amplifiers
• Multicarrier applications in the 700 MHz to 1000 MHz range

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package variations. Confirm RoHS compliance status as per the latest manufacturer release. Ensure handling procedures account for electrostatic discharge sensitivity during transport and assembly.

Selection Notes

Select this component for broadband RF power amplifier designs operating between 700 MHz and 1000 MHz. Consider the SOT502B package dimensions for PCB layout. Evaluate thermal resistance requirements based on the junction-to-case specification for adequate heat dissipation.

Part Context

This part belongs to the BLF6G10 series of LDMOS power transistors from Ampleon. It shares functional similarities with the BLF6G10-200RN but differs in package configuration. The LS designation indicates an earless flanged variant suitable for specific mounting constraints.

Replacement Considerations

BLF6G10-200RN is a related model within the same family, differing primarily in package type.