BLF6G10S-45,112

BLF6G10S-45,112

  • Description:RF MOSFET LDMOS 28V CDFM2
  • Series:-

SKU:a6d008449a44 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V CDFM2
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:922.5MHz ~ 957.5MHz
  • Gain:23dB
  • Voltage - Test:28 V
  • Current Rating (Amps):13A
  • Noise Figure:-
  • Current - Test:350 mA
  • Power - Output:1W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-608B
  • Supplier Device Package:CDFM2
  • Configuration:-

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BLF6G10S-45,112

Overview

The BLF6G10S-45 is a 45 W LDMOS power transistor designed for base station applications operating between 700 MHz and 1000 MHz. It features an internally matched design within a ceramic earless flanged SOT608B package, simplifying integration into RF circuits. The device supports dual-carrier W-CDMA operation with typical performance metrics including 23 dB gain, 8% drain efficiency, and -48.5 dBc ACPR at 920 MHz to 960 MHz under 28 V supply conditions. It exhibits excellent ruggedness, tolerating a VSWR of 10:1 across all phases in Class-AB operation.

Feature Summary

  • Internally matched for simplified circuit integration
  • Integrated ESD protection for enhanced handling safety
  • Excellent thermal stability and high efficiency
  • Robust construction ensuring reliable broadband operation

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi-carrier applications in the 700 MHz to 1000 MHz range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration and manufacturing revision. Confirm RoHS compliance status as stated in the product data sheet prior to procurement. Ensure proper ESD precautions are maintained during storage and transport due to the device's sensitivity to electrostatic discharge.

Selection Notes

Select this component for wideband base station designs requiring integrated matching networks within the 700 MHz to 1000 MHz spectrum. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the application environment accommodates the maximum junction temperature limits defined in the absolute maximum ratings.

Part Context

This part belongs to Ampleon's portfolio of power LDMOS transistors engineered for wireless infrastructure. It utilizes lateral diffused metal oxide semiconductor technology to deliver high linearity and power density. The device is specifically optimized for multi-carrier modulation schemes prevalent in cellular communication systems.

Replacement Considerations

Consult official Ampleon substitution guides for verified replacements. Cross-reference pinout configurations and thermal characteristics when evaluating alternative components from other manufacturers.

BLF6G10S-45,112BLF6G10S-45,112

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