BLF6G10S-45K,112

Overview

The Ampleon BLF6G10S-45K,112 is an LDMOS RF power transistor designed for high-frequency applications. It operates within the frequency range of 922.5 MHz to 957.5 MHz. The device features a maximum drain-source voltage of 65 V and a typical gain of 23 dB. It delivers an output power of 1 W with a test current of 350 mA at a test voltage of 28 V. The component is housed in a CDFM2 package.

Feature Summary

• LDMOS technology construction for robust RF performance
• Optimized for operation in the 922.5 MHz to 957.5 MHz band
• Provides 23 dB gain with 1 W output power capability

Applications

• RF power amplification in communication systems
• Broadband transmitter modules
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the specific ordering suffix and manufacturer documentation to confirm exact electrical characteristics and pinout configuration. Ensure compatibility with thermal management requirements for the CDFM2 package. Cross-reference official datasheets for absolute maximum ratings before integration into circuit designs.

Selection Notes

Select this component when a 65 V LDMOS transistor is required for the 922.5–957.5 MHz frequency range. Consider the 1 W output power and 23 dB gain specifications against system requirements. Evaluate the CDFM2 package constraints for PCB layout and thermal dissipation needs compared to alternative packages.

Part Context

This part belongs to the Ampleon BLF6G series of LDMOS RF power transistors. These devices are engineered for efficiency and linearity in broadband applications. The BLF6G10S-45K variant specifically targets mid-power requirements in the specified UHF frequency bands, offering a balance between gain and output power density.

Replacement Considerations

The BLF6G10S-45K,118 is documented as a related variant within the same product family. Verify pin compatibility and electrical parameter equivalence before substitution.