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The BLF6G13LS-250P,112 is a 250 W LDMOS power transistor designed for continuous wave applications at 1.3 GHz. It operates with a drain-source voltage of 50 V and delivers a typical power gain of 17 dB and drain efficiency of 56% at 250 W output power. The device features an internal matching network for simplified integration. Key electrical parameters include a junction-to-case thermal resistance of 0.26 K/W and a maximum junction temperature of 225 °C. It is housed in an earless flanged ceramic package (SOT1121B) with four leads.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package variant selection. Confirm that the component meets RoHS compliance requirements as specified in the product data sheet. Ensure proper electrostatic discharge handling procedures are followed during storage and assembly to prevent damage to the sensitive internal circuitry.
Select this component for designs requiring high power output at 1.3 GHz with simplified impedance matching needs. Consider the thermal management capabilities provided by the low thermal resistance value when designing heat sinks. Evaluate the ruggedness specifications if the application involves potential load mismatches or varying operating conditions.
This part belongs to the BLF6G13L series of power LDMOS transistors from Ampleon. The LS-250P designation indicates an earless flanged ceramic package variant within this family. Other variants in the series include versions with mounting holes or different package configurations, offering flexibility for various mechanical integration requirements in RF power amplifier designs.
Consult the official datasheet for compatible alternatives within the BLF6G13L series. Verify pinout compatibility and thermal characteristics before substituting with other models.