BLF6G15L-250PBRN:1

Overview

The BLF6G15L-250PBRN is a 250 W LDMOS power transistor designed for base station applications in the 1450 MHz to 1550 MHz frequency range. It features an internally matched design and integrated ESD protection within a flanged ceramic package (SOT1110A). Typical performance at 28 V supply voltage and 1410 mA quiescent current includes 60 W average output power, 18.5 dB power gain, 33.0% drain efficiency, and -32 dBc ACPR under 2C-WCDMA conditions. The device supports broadband operation with enhanced ruggedness against load mismatches up to 10:1 VSWR.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Enhanced ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation
• Compliant to RoHS Directive
• Integrated current sense

Applications

• RF power amplifiers for GSM
• RF power amplifiers for GSM EDGE
• RF power amplifiers for CDMA
• RF power amplifiers for W-CDMA
• Multi carrier applications in the 1450 MHz to 1550 MHz frequency range

Procurement Notes

Verify the specific ordering suffix matches the required package version and compliance standards. Confirm that the component status aligns with current production requirements. Ensure handling procedures account for ElectroStatic Discharge sensitivity during transport and assembly. Cross-reference the latest datasheet revision to validate all electrical parameters before finalizing procurement specifications.

Selection Notes

Select this component for designs requiring high power density in the L-band cellular spectrum. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance. Verify impedance matching networks against the provided typical impedance data for optimal power transfer. Consider the internal matching simplification when designing the input and output circuits for the target application bandwidth.

Part Context

This part belongs to Ampleon's portfolio of LDMOS power transistors optimized for wireless infrastructure. It succeeds previous generations by offering improved ruggedness and integrated features. The device is manufactured using silicon technology specifically tailored for high-efficiency RF power amplification in multi-carrier base station environments.

Replacement Considerations

Check for updated datasheet revisions or newer generation parts from the same manufacturer. Verify pinout compatibility if substituting with similar packages. Ensure thermal and electrical characteristics meet or exceed original design requirements.