BLF6G15L-250PBRN,1

BLF6G15L-250PBRN,1

  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-

SKU:544b68e33aa5 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.47GHz ~ 1.51GHz
  • Gain:18.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):64A
  • Noise Figure:-
  • Current - Test:1.41 A
  • Power - Output:60W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-1110A
  • Supplier Device Package:LDMOST
  • Configuration:-

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BLF6G15L-250PBRN,1

Overview

The BLF6G15L-250PBRN is a 250 W LDMOS power transistor designed for base station applications in the 1450 MHz to 1550 MHz frequency range. It features an internally matched design and integrated ESD protection within a flanged ceramic package (SOT1110A). Typical performance at 28 V supply voltage and 1410 mA quiescent current includes 60 W average output power, 18.5 dB power gain, 33.0% drain efficiency, and -32 dBc ACPR under 2C-WCDMA conditions. The device supports rugged class-AB operation with high thermal stability.

Feature Summary

  • Internally matched for ease of use
  • Integrated ESD protection
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • Easy power control
  • Integrated current sense

Applications

  • RF power amplifiers for GSM
  • RF power amplifiers for GSM EDGE
  • RF power amplifiers for CDMA
  • RF power amplifiers for W-CDMA
  • Multi carrier applications in the 1450 MHz to 1550 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm exact packaging and handling specifications. Ensure compliance with RoHS Directive 2002/95/EC requirements during procurement. Confirm that the component status matches production data sheet standards before finalizing orders.

Selection Notes

Select this component for wideband RF power amplifier designs operating between 1450 MHz and 1550 MHz. Consider the 28 V supply voltage requirement and the need for adequate heat sinking due to the 0.29 K/W junction-to-case thermal resistance. Verify impedance matching networks using the provided typical impedance values for optimal performance.

Part Context

This part belongs to the BLF series of power LDMOS transistors manufactured by Ampleon. It utilizes a flanged ceramic package (SOT1110A) suitable for high-power RF applications. The device is specifically engineered for cellular base station infrastructure, offering robust performance in multi-carrier environments.

Replacement Considerations

Consult official Ampleon documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without rigorous testing and validation against the original specifications.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDS) is rated at 65 V according to the absolute maximum ratings.

Does the device include internal matching components?

Yes, the BLF6G15L-250PBRN is internally matched to simplify circuit design and improve ease of use.

What is the typical junction-to-case thermal resistance?

The typical thermal resistance from junction to case (Rth(j-case)) is 0.29 K/W when operating at 60 W CW output power.

BLF6G15L-250PBRN,1BLF6G15L-250PBRN,1

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