BLF6G15L-40BRN,112

Overview

The BLF6G15L-40BRN,112 is a plastic LDMOS power transistor designed for base station applications. It operates within the frequency range of 700 MHz to 2700 MHz. The device features integrated ESD protection and enhanced ruggedness. Key electrical parameters include a supply voltage of 28 V and a test current of 390 mA. It provides a gain of 22 dB with an output power of 2.5 W in the 788.5 MHz to 823.5 MHz band. The component utilizes a CDFM6 package.

Feature Summary

• Integrated ESD protection
• Enhanced ruggedness
• High efficiency
• Excellent thermal stability

Applications

• Base station applications
• Broadband RF amplification

Procurement Notes

Verify the specific suffix and manufacturer designation when sourcing this component. Confirm that the received part matches the Ampleon USA Inc. specifications for the BLF6G15L-40BRN,112 model. Ensure the packaging integrity remains intact to preserve the integrated ESD protection features. Cross-reference the datasheet parameters against your system requirements before finalizing procurement decisions.

Selection Notes

Select this component for broadband base station applications requiring high thermal stability and ruggedness. The 28 V supply voltage suits specific amplifier architectures. Verify compatibility with the CDFM6 package footprint during PCB design. Consider the 2.5 W output power capability relative to the target frequency band performance requirements.

Part Context

This LDMOS transistor belongs to the BLF6 series from Ampleon. The series targets cellular infrastructure and broadband communication systems. The device replaces previous NXP Semiconductors designs following the corporate separation. It maintains established performance standards for base station power amplification.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.