BLF6G15L-500H,112

Overview

The BLF6G15L-500H is a 500 W LDMOS RF power transistor designed for transmitter and industrial applications. It operates at VDS = 50 V with a quiescent drain current of 1.3 A. In Class-AB operation, it delivers an average output power of 250 W with a gain of 15 dB and drain efficiency of 34%. For DVB-T (8k OFDM) signals, it provides 65 W average output power, achieving a gain of 16 dB and efficiency of 19%. The device features a maximum drain-source voltage of 100 V and withstands load mismatches up to VSWR = 10:1.

Feature Summary

• Internally matched for ease of use
• Excellent ruggedness under digital modulation conditions
• Integrated ESD protection
• High efficiency and thermal stability

Applications

• Digital transmitter applications DVB at 1.5 GHz
• Industrial applications at 1.5 GHz

Procurement Notes

Verify the specific package variant required for the design. The BLF6G15L-500H corresponds to the SOT539A flanged balanced ceramic package with two mounting holes. Confirm that the ordering suffix matches the intended physical configuration before finalizing procurement orders.

Selection Notes

Select this component for high-power linear amplification in the 1.45 GHz to 1.49 GHz range. Ensure the application circuit maintains a VDS of 50 V and IDq of 1.3 A. Verify that the load impedance matches the typical values provided in the datasheet for optimal performance and reliability.

Part Context

This part belongs to the BLF6G15LS-500H series from Ampleon. It is a Laterally Diffused Metal-Oxide Semiconductor Transistor optimized for digital signal processing. The device is RoHS compliant and designed for robust performance in demanding RF environments.

Replacement Considerations

The BLF6G15LS-500H is the earless flange version (SOT539B). Both share identical electrical specifications but differ in mechanical mounting requirements.