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The BLF6G20-180PN is a 180 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It operates with a drain-source voltage of 32 V and features an integrated ESD protection circuit. The device utilizes a flanged balanced ceramic package (SOT539A) with two mounting holes and four leads. Typical performance at Tcase = 25 °C includes a power gain of 18 dB, drain efficiency of 29.5%, and ACPR of -35 dBc under 2-carrier W-CDMA conditions. The thermal resistance from junction to case is 0.45 K/W.
Verify component authenticity through authorized Ampleon distributors or official channels. Confirm the specific revision status against the latest product data sheet before integration. Ensure proper handling procedures are followed due to ESD sensitivity. Validate that the SOT539A package dimensions match the target PCB footprint requirements.
Select this component for high-efficiency broadband RF power amplification tasks. Ensure the application environment supports the required 32 V supply voltage. Verify that the thermal management system can maintain the case temperature below 150 °C. Confirm compatibility with class-AB biasing configurations for optimal linearity and efficiency metrics.
This part belongs to the BLF6G20 series of power LDMOS transistors manufactured by Ampleon USA Inc. The series targets cellular infrastructure markets requiring robust performance in the 1800 MHz to 2000 MHz bands. The specific model integrates internal matching networks to reduce external component count.
Consult the official Ampleon replacement guide for verified substitute part numbers. Do not assume functional equivalence with other models without verifying pinout, electrical parameters, and package dimensions.
The absolute maximum drain-source voltage (VDS) rating is 65 V.
Yes, the BLF6G20-180PN is internally matched for ease of use in amplifier designs.
The typical power gain (Gp) is 18 dB when delivering 50 W of average output power.