SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BLF6G20-45 is a 45 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It operates with a drain-source voltage of 28 V and features an internal matching network. Typical performance at 1805 MHz and 1880 MHz includes an average output power of 2.5 W, a power gain of 19.2 dB, a drain efficiency of 14%, and an ACPR of -50 dBc under 2-carrier W-CDMA conditions. The device has a maximum junction temperature of 225 °C and a thermal resistance from junction to case of 1.7 K/W.
Verify the specific package variant required for the design. The BLF6G20-45 corresponds to the SOT608A flanged ceramic package with two mounting holes and two leads. Confirm that the ordering suffix matches the intended physical configuration before procurement to ensure mechanical compatibility with the heat sink and circuit board layout.
Select this component for broadband operations between 1800 MHz and 2000 MHz where high efficiency and thermal stability are required. Ensure the application environment can support the specified quiescent current and supply voltage. Verify that the load mismatch conditions do not exceed the rated VSWR limits during class-AB operation to maintain device reliability.
This part belongs to the BLF6G series of LDMOS power transistors manufactured by Ampleon. It is specifically engineered for RF power amplifier stages in telecommunications infrastructure. The device utilizes laterally diffused metal oxide semiconductor technology to deliver high power density within a compact ceramic package suitable for base station deployments.
The BLF6G20S-45 is a related variant featuring a ceramic earless flanged package (SOT608B). While electrical characteristics are similar, the mechanical footprint differs due to the absence of mounting holes. Direct substitution requires verification of mechanical clearance and mounting hardware compatibility.