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The BLF6G20LS-75,112 is a power LDMOS transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features an earless flanged ceramic package (SOT502B) with two leads and internal matching. The device operates at a drain-source voltage of 28 V, delivering 75 W of output power in continuous wave mode. In GSM EDGE operation, it provides 29.5 W average output power with 19 dB gain and 37.5% efficiency. Key electrical limits include a 65 V drain-source breakdown voltage and a junction temperature rating up to 225 °C.
Verify the specific ordering suffix against official Ampleon documentation to confirm package variant and compliance status. Confirm current product lifecycle status as specifications may change. Ensure handling procedures account for electrostatic discharge sensitivity during transport and installation.
Select this component for broadband operations between 1800 MHz and 2000 MHz requiring high efficiency and ruggedness. Verify thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the application circuit supports the required 28 V supply voltage and appropriate biasing conditions for class-AB operation.
This part belongs to the BLF6G20 series of power LDMOS transistors manufactured by Ampleon USA Inc. The LS designation indicates the earless flanged ceramic package version (SOT502B), distinct from the standard flanged version. These devices are engineered specifically for cellular infrastructure power amplifier modules.
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility with the SOT502B package dimensions, pinout configuration, and thermal characteristics. Ensure replacement components meet the same electrical ratings for the 1800 MHz to 2000 MHz frequency band.