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The Ampleon BLF6G22-180PN is a 180 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It operates with a maximum drain-source voltage of 65 V and a junction temperature rating up to 225 °C. In typical 2-carrier W-CDMA operation at 32 V, it delivers 50 W average output power with 17.5 dB gain and 27.5% efficiency. The device features an internally matched design and integrated ESD protection, housed in a flanged balanced ceramic package (SOT539A).
Verify the specific ordering suffix against the manufacturer's current documentation to confirm package variant and compliance status. Ensure that handling procedures strictly adhere to electrostatic discharge precautions during transport and assembly. Confirm that the application environment remains within the specified thermal and electrical limiting values to maintain device reliability.
Select this component for broadband RF power amplifier designs operating between 2000 MHz and 2200 MHz. The internal matching network simplifies circuit design compared to unmatched devices. Consider the SOT539A flanged package for effective heat dissipation via the mounting surface. Verify that the system can support the required quiescent current and supply voltage specifications for optimal performance.
This part belongs to the Ampleon BLF6G series of LDMOS power transistors. The BLF6G22-180PN utilizes the SOT539A flanged balanced ceramic package. A related earless variant, BLF6G22LS-180PN, shares identical electrical characteristics but differs in mechanical packaging configuration.
The BLF6G22LS-180PN serves as a direct functional equivalent with identical electrical specifications. Substitution requires verification of mechanical fit due to the difference between the flanged SOT539A and earless SOT539B packages. No other cross-compatible models are documented in the official datasheet.