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The BLF6G22L-40P is a power LDMOS transistor designed for base station applications in the 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz frequency bands. It operates with a drain-source voltage of 28 V and a quiescent current of 410 mA. In Class AB operation, it delivers an average output power of 13.5 W at 2110–2170 MHz with a typical gain of 19 dB and drain efficiency of 30%. The device features a flanged ceramic package (SOT1121A) with two mounting holes and four leads.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package configuration. Confirm RoHS compliance status as required by project specifications. Ensure that the procurement channel provides valid traceability for this production data sheet component.
Select this component for base station designs requiring high ruggedness and low memory effects. Verify that the application supports Class AB operation with appropriate load mismatch conditions. Ensure the design accommodates the flanged ceramic package requirements for thermal management and mechanical mounting.
This part belongs to the BLF6G22LS-40P family, which includes variants like the earless flanged version (BLF6G22LS-40P). Both share identical electrical characteristics but differ in physical package construction. The BLF6G22L-40P specifically utilizes the SOT1121A outline with mounting holes.
The BLF6G22LS-40P serves as a direct functional substitute within the same family, differing only in the absence of mounting ears on the package. No other cross-manufacturer equivalents are documented in the provided datasheet.