BLF6G22LS-130,118

Overview

The BLF6G22LS-130 is a 130 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It operates at a drain-source voltage of 28 V with a breakdown voltage of 65 V. In a typical 2-carrier W-CDMA test circuit, it delivers an average output power of 30 W with a power gain of 17 dB and a drain efficiency of 28.5%. The device features integrated ESD protection and is internally matched for ease of use. It utilizes an earless flanged SOT502B ceramic package.

Feature Summary

• Internally matched for simplified circuit integration
• Integrated electrostatic discharge (ESD) protection
• Designed for broadband operation across 2000 MHz to 2200 MHz
• Capable of withstanding high load mismatch conditions

Applications

• RF power amplifiers for W-CDMA base stations
• Multi-carrier applications in the 2000 MHz to 2200 MHz range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current product database to confirm availability and exact specifications. Confirm that the component meets all necessary environmental compliance standards required for the intended deployment environment before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high ruggedness and thermal stability in cellular infrastructure. Ensure the application circuit can support the specified quiescent current and provides adequate heat sinking to maintain the junction temperature within the recommended operating limits during continuous wave or multi-carrier operations.

Part Context

This part belongs to the Ampleon BLF series of power LDMOS transistors. It is specifically engineered for wireless communication infrastructure, offering a balance of high power density and linearity suitable for modern wideband modulation schemes used in mobile network base stations.

Replacement Considerations

Consult the official Ampleon replacement guide for verified cross-reference models. Verify pinout compatibility and thermal resistance characteristics when substituting similar devices from other manufacturers to ensure proper integration into existing board layouts.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage (VDS) rating is 65 V.

Does the device include internal matching networks?

Yes, the BLF6G22LS-130 is internally matched to facilitate easier design implementation.

What is the thermal resistance from junction to case?

The typical thermal resistance from junction to case (Rth(j-case)) is 0.43 K/W.