BLF6G22LS-40P,118

BLF6G22LS-40P,118

$54.60
  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-

SKU:6a40412973c7 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Technology:LDMOS
  • Frequency:2.11GHz ~ 2.17GHz
  • Gain:19dB
  • Voltage - Test:28 V
  • Current Rating (Amps):16A
  • Noise Figure:-
  • Current - Test:410 mA
  • Power - Output:13.5W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1121B
  • Supplier Device Package:LDMOST
  • Configuration:Dual, Common Source

Download product information

BLF6G22LS-40P,118

Overview

The BLF6G22LS-40P is an LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz frequency bands. It operates with a drain-source voltage of 28 V and delivers average output power ranging from 5 W to 13.5 W depending on the mode. The device features a typical power gain between 19 dB and 20.5 dB, with drain efficiency reaching up to 32% under single-carrier conditions. It includes integrated ESD protection and is internally matched for ease of use.

Feature Summary

  • Excellent ruggedness capable of withstanding high load mismatch
  • Low thermal resistance providing excellent thermal stability
  • Lower output capacitance optimized for Doherty applications
  • Designed for low memory effects to facilitate pre-distortion

Applications

  • RF power amplifier for base stations in the 2110 MHz to 2170 MHz band
  • Multi-carrier applications in the 2110 MHz to 2170 MHz band
  • RF driver amplifier in the 1805 MHz to 1880 MHz band

Procurement Notes

Verify the specific package variant required for the design, as the LS suffix denotes an earless flanged ceramic package (SOT1121B). Confirm RoHS compliance status and check for the most recent product data sheet revision before initiating designs. Ensure sourcing channels provide valid manufacturer documentation to guarantee component authenticity and traceability.

Selection Notes

Select this component for Class AB operation where high efficiency and linearity are critical. The internal matching simplifies circuit design compared to unmatched counterparts. Consider the lower output capacitance if utilizing a Doherty architecture. Verify that the application environment supports the specified junction temperature limits and thermal management requirements.

Part Context

This part belongs to the BLF6G22L series of power LDMOS transistors manufactured by Ampleon. The BLF6G22LS-40P specifically utilizes the SOT1121B earless flanged ceramic package, distinguishing it from the standard flanged version. It is engineered for robust performance in multi-carrier RF environments.

Replacement Considerations

The datasheet lists the BLF6G22L-40P as the primary related part number, which shares identical electrical specifications but uses the SOT1121A flanged package with mounting holes. No other official substitute part numbers are documented in the provided source material.

BLF6G22LS-40P,118BLF6G22LS-40P,118
$54.60
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