SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
It is a high-power RF LDMOS transistor designed for broadband applications in the 1.8 to 2.2 GHz frequency range.
The device utilizes a leadless surface-mount package optimized for thermal dissipation and RF performance.
Yes, it is engineered for high-efficiency power amplification in multi-standard cellular infrastructure.