BLF6G27-10,118

Overview

The BLF6G27-10,118 is a plastic LDMOS power transistor manufactured by Ampleon USA Inc. Designed for base station applications, it operates at frequencies from 700 MHz to 2700 MHz with an output power of 10 W. The device features a test voltage of 28 V and a rated voltage of 65 V. It utilizes the SOT467C package and offers high efficiency, excellent ruggedness, and broadband operation capabilities.

Feature Summary

• High efficiency and excellent thermal stability
• Designed for broadband operation across 700 MHz to 2700 MHz
• Integrated ESD protection

Applications

• CDMA base stations
• W-CDMA systems
• GSM EDGE networks
• LTE infrastructure
• WiMAX deployments

Procurement Notes

Verify component authenticity through authorized Ampleon distributors or certified suppliers. Confirm RoHS compliance status and check for recent Product Change Notifications (PCN) regarding manufacturing site changes or material updates before procurement.

Selection Notes

Select this component for wideband RF power amplification in cellular infrastructure. Ensure the design supports the 28 V operating voltage and accommodates the SOT467C package footprint. Verify thermal management requirements align with the device's power dissipation characteristics.

Part Context

This part belongs to the BLF6G27 series of plastic LDMOS transistors. It serves as a successor or variant within NXP/Ampleon's portfolio for multi-standard base station power amplifiers, replacing older discrete solutions with integrated protection features.

Replacement Considerations

Check for direct replacements within the BLF6G27 family. Evaluate cross-compatibility with other 10 W LDMOS devices in the SOT467C package if pinout and electrical parameters match exactly.