BLF6G27-45,112

Overview

The BLF6G27-45 is a 45 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It operates with a typical supply voltage of 28 V and features an integrated ESD protection circuit. The device is qualified for a maximum drain-source voltage (VDS) of 32 V and includes internal matching for simplified integration. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.4 V to 2.4 V, and a forward transconductance of approximately 4.3 S. In single carrier N-CDMA operation at 28 V and 350 mA quiescent current, it delivers 7 W average output power with 18 dB gain and 24% drain efficiency.

Feature Summary

• Integrated ESD protection for enhanced handling safety
• Internally matched design for ease of use
• Excellent ruggedness capable of withstanding high VSWR mismatches
• High efficiency and excellent thermal stability

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2500 MHz to 2700 MHz range
• WiMAX power amplification

Procurement Notes

Verify the specific package variant required for the application, as the BLF6G27-45 corresponds to the flanged ceramic package SOT608A. Confirm that the ordering suffix matches the intended physical configuration before finalizing procurement orders. Ensure compliance with RoHS directives during component sourcing.

Selection Notes

Select this component for broadband RF power amplifier designs operating between 2500 MHz and 2700 MHz. Ensure the thermal management system can maintain the case temperature within specified limits given the junction-to-case thermal resistance. Verify that the load impedance matches the test circuit specifications for optimal performance.

Part Context

This part belongs to the Ampleon WiMAX power LDMOS transistor family. It is specifically engineered for cellular base station infrastructure requiring robust performance in the 2.5 GHz to 2.7 GHz spectrum. The device utilizes Laterally Diffused Metal-Oxide Semiconductor technology to achieve high power density and linearity.

Replacement Considerations

The datasheet lists the BLF6G27S-45 as a related variant featuring an earless flanged package (SOT608B). While electrical characteristics are similar, mechanical mounting differences require careful evaluation of the PCB layout and heatsink interface when considering substitution.