BLF6G27-45,135

Overview

The BLF6G27-45 is a 45 W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It supports single carrier N-CDMA with pilot, paging, sync, and six traffic channels (Walsh codes 8–13), operating at a PAR of 9.7 dB at 0.01% probability on CCDF with a channel bandwidth of 1.23 MHz. The device is qualified up to a maximum VDS operation of 32 V and features an integrated ESD protection circuit. Typical performance at Tcase = 25 °C includes a drain efficiency of 24%, a power gain of 18 dB, and an ACPR of -49 dBc at 885 kHz offset.

Feature Summary

• Integrated ESD protection
• Excellent ruggedness
• High efficiency
• Excellent thermal stability
• Designed for broadband operation
• Internally matched for ease of use

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in the 2500 MHz to 2700 MHz frequency range

Procurement Notes

Verify the specific package variant required for the design, as the BLF6G27-45 corresponds to the SOT608A flanged ceramic package with two mounting holes and two leads. Confirm RoHS compliance status and check for any recent product change notifications or obsolescence notices directly from Ampleon before finalizing procurement plans.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the WiMAX and N-CDMA bands. Ensure the thermal management system can maintain the case temperature within specified limits to achieve the rated 45 W output power. Verify that the gate-source voltage does not exceed the absolute maximum rating of +13 V during operation.

Part Context

This part belongs to the BLF6 series of LDMOS power transistors manufactured by Ampleon USA Inc. It is specifically engineered for wireless infrastructure, offering robust performance in demanding RF environments. The device represents a continuation of Ampleon's expertise in high-power RF semiconductor solutions derived from its legacy in the industry.

Replacement Considerations

The datasheet lists the BLF6G27S-45 as a related variant utilizing the SOT608B earless flanged package. Direct substitution requires verifying mechanical footprint compatibility and ensuring the application board supports the specific lead configuration of the replacement package.

FAQ

What is the maximum drain-source voltage the BLF6G27-45 is qualified for?

The device is qualified up to a maximum VDS operation of 32 V.

Does the BLF6G27-45 include electrostatic discharge protection?

Yes, the transistor features integrated ESD protection.

What is the typical drain efficiency at 7 W average output power?

The typical drain efficiency is 24% when operating at 7 W average output power.