BLF6G38-10,118

Description：RF MOSFET LDMOS 28V CDFM2
Series：-

SKU:f0d285cd7154 Category: RF FETs, MOSFETs Brand: Ampleon USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V CDFM2
Series：-
Mfr：Ampleon USA Inc.
Package：Tray
Technology：LDMOS
Frequency：3.4GHz ~ 3.6GHz
Gain：14dB
Voltage - Test：28 V
Current Rating (Amps)：3.1A
Noise Figure：-
Current - Test：130 mA
Power - Output：2W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：SOT-975B
Supplier Device Package：CDFM2
Configuration：-

Download product information

BLF6G38-10,118

Overview

The BLF6G38-10 is a 10 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3600 MHz frequency range. It operates at a supply voltage of 28 V with an average output power of 2 W, delivering a typical gain of 14 dB and drain efficiency of 20%. The device features a maximum drain-source voltage rating of 65 V and a junction temperature limit of 200 °C. It utilizes an earless flanged ceramic package (SOT975B) with a thermal resistance from junction to case of 4.0 K/W.

Feature Summary

Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use

Applications

RF power amplifiers for base stations
Multi carrier applications in the 3400 MHz to 3600 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package variant and compliance status. Confirm RoHS Directive 2002/95/EC compliance requirements prior to procurement. Ensure handling procedures account for ElectroStatic Discharge sensitivity during transport and unpacking.

Selection Notes

Select this component for WiMAX and N-CDMA base station designs requiring high linearity and ruggedness within the 3.4 GHz to 3.6 GHz band. Evaluate thermal management capabilities given the 4.0 K/W junction-to-case resistance. Verify that the application circuit can maintain the specified 28 V supply and 130 mA quiescent current conditions for optimal performance.

Part Context

This device belongs to Ampleon's portfolio of LDMOS power transistors engineered for wireless communication infrastructure. It is specifically optimized for wideband operations in the Wireless Communications Service (WCS) spectrum. The product line supports modern digital modulation schemes used in cellular networks.