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The BLF6G38-10G is a 10 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3600 MHz frequency range. It operates at a supply voltage of 28 V with an average output power of 2 W and a typical gain of 14 dB. The device features a drain-source breakdown voltage of 65 V, a junction-to-case thermal resistance of 4.0 K/W, and a gate-source threshold voltage ranging from 1.4 V to 2.4 V. Packaged in the SOT975C earless flanged ceramic format, it includes integrated ESD protection and is internally matched for ease of use.
Verify the specific package variant required, as the BLF6G38-10 uses SOT975B while the BLF6G38-10G utilizes the SOT975C earless flanged ceramic package. Confirm RoHS compliance status and check for any product change notices or obsolescence announcements directly from Ampleon before finalizing procurement plans.
Select this component for WiMAX and N-CDMA base station designs requiring 10 W output in the 3.4 GHz to 3.6 GHz band. Ensure the application supports a 28 V supply and class-AB operation. Verify that the system can handle the specified load mismatch ruggedness of VSWR = 10:1 through all phases during peak operation.
This device belongs to the BLF6G38 series of WiMAX power LDMOS transistors manufactured by Ampleon USA Inc. The series includes variants such as the BLF6G38-10 and BLF6G38-10G, which differ primarily in their packaging configurations while maintaining identical electrical performance specifications for broadband RF power amplification.
No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, ensure the replacement matches the 3400 MHz to 3600 MHz frequency range, 10 W power capability, and compatible SOT975C footprint dimensions.