BLF6G38-50,112

BLF6G38-50,112

$93.84
  • Description:RF MOSFET LDMOS 28V SOT502A
  • Series:-

SKU:45b763db3b80 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT502A
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray,Tray
  • Technology:LDMOS
  • Frequency:3.4GHz ~ 3.6GHz
  • Gain:14dB
  • Voltage - Test:28 V
  • Current Rating (Amps):16.5A
  • Noise Figure:-
  • Current - Test:450 mA
  • Power - Output:9W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-502A
  • Supplier Device Package:SOT502A
  • Configuration:-

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BLF6G38-50,112

Overview

The BLF6G38-50 is a 50 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3800 MHz frequency range. It operates with a supply voltage of 28 V and features an internally matched design for ease of use. Typical performance at 3400–3600 MHz includes a peak output power of 70 W, a power gain of 14 dB, and a drain efficiency of 23%. The device has a drain-source breakdown voltage of 65 V and supports a maximum junction temperature of 200 °C. Thermal resistance from junction to case is 0.9 K/W. It is housed in a flanged ceramic SOT502A package.

Feature Summary

  • Internally matched for simplified circuit integration
  • Integrated ESD protection for enhanced reliability
  • Excellent ruggedness capable of withstanding high VSWR mismatches
  • High efficiency and excellent thermal stability

Applications

  • RF power amplifiers for base stations
  • Multicarrier applications in the 3400 MHz to 3800 MHz range
  • WiMAX power amplification

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm RoHS compliance status as per the latest datasheet revision. Ensure handling procedures account for ESD sensitivity during transport and assembly. Validate that the application environment remains within the specified absolute maximum ratings to prevent permanent damage.

Selection Notes

Select this component for broadband RF power amplifier designs requiring operation between 3.4 GHz and 3.8 GHz. Consider the internal matching network when designing input and output impedance circuits. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the load mismatch conditions do not exceed the rated VSWR limits during class-AB operation.

Part Context

This part belongs to the Ampleon LDMOS power transistor portfolio, specifically engineered for wireless infrastructure. It complements other broadband amplifiers by offering integrated matching and robust performance in the 3.4–3.8 GHz band. The device is suitable for replacing older discrete solutions where size and thermal performance are critical constraints in base station architectures.

Replacement Considerations

No official substitute part numbers are documented in the provided datasheet. When evaluating alternatives, verify compatibility with the 3400–3800 MHz frequency range, 28 V operating voltage, and SOT502A package dimensions. Ensure the replacement device meets the same ruggedness and thermal specifications for direct interchangeability.

BLF6G38-50,112BLF6G38-50,112
$93.84
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