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The BLF6G38LS-50 is a 50 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3800 MHz frequency range. It operates with a drain-source voltage of 28 V and features an internal matching network. The device delivers a typical power gain of 14 dB and a drain efficiency of 23% at 9 W average output power. Key electrical parameters include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage of 2.4 V, and a thermal resistance from junction to case of 0.7 K/W. It utilizes the SOT502B earless flanged ceramic package.
Verify the specific ordering suffix against official Ampleon documentation to confirm the exact package variant. Ensure that the procurement channel provides valid traceability and authenticity guarantees for RF semiconductor components. Confirm RoHS compliance status through the manufacturer's current product status records before finalizing acquisition.
Select this component for broadband operations requiring high efficiency and excellent thermal stability within the specified frequency band. Evaluate the thermal resistance characteristics relative to the system's cooling capabilities. Consider the internal matching network when designing input and output impedance circuits to optimize performance across the operational bandwidth.
This model belongs to the BLF6G38 series of WiMAX power LDMOS transistors manufactured by Ampleon. The LS-50 designation specifically identifies the earless flanged ceramic package version (SOT502B), distinguishing it from the standard flanged variant. These devices are engineered for robust performance in wireless communication infrastructure.
Consult the official Ampleon datasheet for confirmed substitute part numbers. Verify compatibility regarding package dimensions, pin configurations, and electrical specifications before implementing any alternative components in existing designs.