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The BLF6G38LS-50 is a 50 W LDMOS power transistor designed for base station applications in the 3400 MHz to 3800 MHz frequency range. It operates with a supply voltage of 28 V and features an internal matching network for ease of use. The device provides a typical power gain of 14 dB and drain efficiency of 23% at 9 W average output power. It includes integrated ESD protection and exhibits excellent ruggedness, supporting a load mismatch of VSWR = 10:1 through all phases. The component is housed in an earless flanged ceramic SOT502B package.
Verify the specific ordering suffix against the manufacturer's current documentation to confirm package type and compliance status. Ensure that the procurement channel provides valid traceability for the component. Confirm RoHS compliance requirements match the project specifications before finalizing orders.
Select this component for broadband RF power amplifier designs requiring high efficiency and linearity in the 3.4 GHz to 3.8 GHz band. Consider the SOT502B package dimensions and thermal resistance when designing the heatsink interface. Verify input and output impedance matching networks against the provided test circuit data for optimal performance.
This part belongs to the Ampleon BLF6G series of LDMOS power transistors. The LS suffix indicates the earless flanged ceramic package variant (SOT502B), distinguishing it from the standard flanged version with mounting holes. These devices are engineered for robust performance in wireless infrastructure environments.
Consult official Ampleon documentation for qualified substitute part numbers. Cross-compatibility depends on precise electrical parameters, package footprint, and thermal characteristics. Verify pinout alignment and impedance matching requirements before substituting.