BLF7G15LS-200,118

Overview

The BLF7G15LS-200 is a 200 W LDMOS power transistor designed for base station applications in the 1450 MHz to 1550 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1600 mA, delivering an average output power of 50 W per carrier in two-carrier W-CDMA mode. The device provides a typical power gain of 19.5 dB and a drain efficiency of 29% under these conditions. It features a thermal resistance from junction to case of 0.30 K/W and is housed in an earless flanged ceramic package (SOT 502B).

Feature Summary

• Designed for broadband operation within the 1450 MHz to 1550 MHz frequency range.
• Features low output capacitance to improve performance in Doherty amplifier configurations.
• Internally matched for ease of use and includes integrated ESD protection.
• Optimized for low memory effects to ensure excellent pre-distortability.

Applications

• RF power amplifiers for W-CDMA base stations.
• Multi-carrier applications operating in the 1450 MHz to 1550 MHz frequency range.

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package version and compliance status. Ensure that the procurement channel sources products directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm RoHS compliance requirements align with the product specifications before finalizing orders.

Selection Notes

Select this component for designs requiring high ruggedness and low thermal resistance in the 1450 MHz to 1550 MHz band. Consider its internal matching and low memory effects when designing linear amplification stages. Verify that the application environment supports the specified junction temperature limits and thermal management requirements.

Part Context

This part belongs to the BLF7G series of LDMOS power transistors manufactured by Ampleon. The series is engineered for wireless communication infrastructure, specifically targeting base station power amplification needs. The BLF7G15LS-200 variant focuses on the 1450 MHz to 1550 MHz spectrum, providing a balance of power output and efficiency for modern cellular networks.

Replacement Considerations

Consult official Ampleon documentation for confirmed substitute part numbers. Evaluate alternative devices based on matching frequency ranges, power output capabilities, and package dimensions. Ensure any replacement maintains compatibility with existing thermal and impedance matching networks.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF7G15LS-200 can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases during class-AB operation at 1476 MHz to 1511 MHz.

What is the typical drain efficiency in two-carrier W-CDMA mode?

In a two-carrier W-CDMA test circuit at Tcase = 25 °C, the typical drain efficiency is 29% when delivering 50 W of average output power per carrier.

What package type does this transistor use?

The BLF7G15LS-200 utilizes an earless flanged ceramic package designated as SOT 502B, featuring two leads.