BLF7G15LS-300P,112

BLF7G15LS-300P,112

  • Description:RF MOSFET LDMOS 28V SOT539B
  • Series:-

SKU:50917cc62723 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V SOT539B
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.47GHz ~ 1.51GHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):45A
  • Noise Figure:-
  • Current - Test:2.6 A
  • Power - Output:85W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-539B
  • Supplier Device Package:SOT539B
  • Configuration:Dual, Common Source

Download product information

BLF7G15LS-300P,112

Overview

The BLF7G15LS-300P is a 300 W LDMOS power transistor designed for base station applications in the 1450 MHz to 1550 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 2600 mA, delivering an average output power of 85 W with a typical power gain of 18 dB and drain efficiency of 31%. The device features a thermal resistance from junction to case of 0.21 K/W and a drain-source breakdown voltage of 65 V. Packaged in the SOT539B earless flanged balanced ceramic format, it includes integrated ESD protection and internal matching.

Feature Summary

  • Internally matched for ease of use
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent pre-distortability
  • Integrated ESD protection

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multi carrier applications in the 1450 MHz to 1550 MHz frequency range

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to ensure correct package version and compliance status. Confirm that the component meets Directive 2002/95/EC RoHS requirements as specified in the product data sheet before finalizing procurement specifications.

Selection Notes

Select this component for broadband operations between 1450 MHz and 1550 MHz where high efficiency and low thermal resistance are required. Ensure the design accommodates the SOT539B earless flanged balanced ceramic package and utilizes appropriate impedance matching networks based on the provided typical impedance data.

Part Context

This part belongs to the Ampleon BLF7G series of LDMOS power transistors specifically engineered for RF power amplifier applications. The BLF7G15LS-300P variant targets the 1450 MHz to 1550 MHz band, offering a balance of high output power and efficiency suitable for modern cellular infrastructure.

Replacement Considerations

Consult the official Ampleon datasheet or contact local sales offices for verified substitute part numbers. Cross-compatibility should be validated against electrical parameters, pin configurations, and thermal characteristics rather than assuming direct interchangeability.

FAQ

What is the maximum load mismatch the device can withstand?

The BLF7G15LS-300P can withstand a load mismatch corresponding to a VSWR of 10:1 through all phases under specified operating conditions.

What is the gate-source threshold voltage range?

The gate-source threshold voltage (VGS(th)) ranges from 1.5 V to 2.3 V.

Is the device automotive qualified?

No, unless expressly stated otherwise, this product is not suitable for automotive use and has not been qualified according to automotive testing requirements.

BLF7G15LS-300P,112BLF7G15LS-300P,112

Click on the inquiry