BLF7G20L-90P,112

Overview

The BLF7G20L-90P is a 90 W LDMOS power transistor designed for base station applications at frequencies from 1800 MHz to 2000 MHz. It operates optimally within the 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz, and 2110 MHz to 2170 MHz bands. The device features a drain-source voltage of 65 V, a junction temperature limit of 200 °C, and a thermal resistance from junction to case of 0.49 K/W. In class-AB operation at 1805 MHz to 1880 MHz with VDS = 28 V and IDq = 550 mA, it delivers 84 W CW output power with 19 dB gain and 54% efficiency. For GSM EDGE signals, it provides 40 W output with 19.5 dB gain, 41% efficiency, -61 dBc ACPR (400 kHz), and 2.5% RMS EVM.

Feature Summary

• Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
• Low thermal resistance providing excellent thermal stability
• Lower output capacitance optimized for improved performance in Doherty applications
• Designed for low memory effects providing excellent pre-distortability

Applications

• RF power amplifiers for base stations
• Multi-carrier applications in frequency bands of 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz, and 2110 MHz to 2170 MHz

Procurement Notes

Verify the specific package variant required for the design, as the BLF7G20L-90P corresponds to the SOT1121A flanged ceramic package with mounting holes, while the BLF7G20LS-90P uses the SOT1121B earless flanged package. Confirm RoHS compliance status and check for any product change notices or end-of-life announcements directly from Ampleon before finalizing procurement plans.

Selection Notes

Select this component for broadband RF power amplifier designs operating between 1800 MHz and 2000 MHz. Ensure the application circuit can maintain the recommended case temperature of 25 °C during testing and that the bias conditions align with the specified 28 V drain supply and appropriate quiescent current for the desired linearity and efficiency trade-offs.

Part Context

This part belongs to the BLF7G20L series of power LDMOS transistors manufactured by Ampleon USA Inc. The series includes variants such as the BLF7G20LS-90P, which shares identical electrical characteristics but differs in physical packaging. These devices are engineered specifically for high-efficiency and high-linearity requirements in modern cellular infrastructure.

Replacement Considerations

The BLF7G20LS-90P serves as a direct functional equivalent with an earless flanged ceramic package (SOT1121B). When substituting, verify mechanical fitment due to the absence of mounting ears on the LS variant. No other cross-compatible models are officially documented in the provided datasheet.

FAQ

What is the maximum load mismatch the BLF7G20L-90P can withstand?

The device is capable of withstanding a load mismatch corresponding to a Voltage Standing Wave Ratio (VSWR) of 10:1 through all phases under specified operating conditions.

Does the BLF7G20L-90P include internal protection features?

Yes, the transistor includes integrated ElectroStatic Discharge (ESD) protection.

What is the typical thermal resistance from junction to case?

The typical thermal resistance from junction to case (Rth(j-c)) is 0.49 K/W when measured at a case temperature of 80 °C and a power loss of 90 W.