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The BLF7G20L-90P is a 90 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It features excellent ruggedness, high efficiency, and low thermal resistance (Rth(j-c) typ 0.49 K/W). The device operates at VDS = 28 V with typical drain efficiencies of 54% in CW mode and 41% in GSM EDGE mode. It includes integrated ESD protection and is internally matched for ease of use.
Verify the specific package version required for your design. The BLF7G20L-90P corresponds to the SOT1121A flanged ceramic package with two mounting holes. Ensure that the ordering suffix matches the exact physical configuration needed for your PCB layout and thermal management strategy.
Select this component for designs requiring high linearity and efficiency in Class-AB operation. Verify impedance matching networks against the provided typical impedance values at 1800 MHz, 1840 MHz, and 1880 MHz. Confirm that the thermal interface can maintain Tcase within limits to support the specified 90 W output power.
This part belongs to the Ampleon BLF7G20L series of power LDMOS transistors. It is specifically engineered for cellular infrastructure, offering a balance of power density and signal fidelity. The datasheet also covers the BLF7G20LS-90P variant, which utilizes the SOT1121B earless flanged package.
The BLF7G20LS-90P is a direct mechanical alternative using the SOT1121B earless package. Electrical characteristics remain identical. No other cross-compatible substitutes are documented in the official data sheet.