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The BLF7G20LS-200 is a 200 W LDMOS power transistor designed for base station applications in the 1805 MHz to 1990 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1620 mA, delivering an average output power of 55 W in two-carrier W-CDMA mode. The device features a typical power gain of 18 dB and a drain efficiency of 33%. Its thermal resistance from junction to case is 0.27 K/W at Tcase = 80 °C. The component utilizes an earless flanged ceramic package (SOT502B) with two leads.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package configuration. Confirm RoHS compliance status and product lifecycle stage prior to procurement. Ensure that the supply chain source provides valid traceability for this RF power semiconductor component.
Select this component for designs requiring high ruggedness and low memory effects to support digital pre-distortion. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the application environment remains within the absolute maximum ratings for drain-source and gate-source voltages.
This part belongs to the BLF7G20L-200 series, representing the earless flanged variant manufactured by Ampleon. It shares electrical characteristics with the standard flanged version but differs in mechanical mounting. The device is engineered for robust performance in cellular infrastructure environments.
The BLF7G20L-200 serves as the mechanically distinct counterpart within the same electrical specification family. Verify pinout compatibility and package dimensions when substituting between the flanged and earless versions.