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The BLF7G20LS-250P is a 250 W LDMOS power transistor designed for base station applications in the 1805 MHz to 1880 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers an average output power of 70 W in two-carrier W-CDMA mode. The device features a typical power gain of 18 dB, a drain efficiency of 35%, and an adjacent channel power ratio of -29.5 dBc. It utilizes the SOT539B earless flanged ceramic package with four leads.
Verify the specific ordering suffix against official Ampleon documentation to confirm the exact package variant. Ensure that the procurement channel provides valid traceability for this component. Confirm RoHS compliance status as stated in the product data sheet prior to finalizing acquisition.
Select this component for designs requiring high ruggedness and low memory effects suitable for digital pre-distortion. Verify that the application environment supports the specified junction temperature limits and thermal management requirements for class-AB operation at the target frequencies.
This part belongs to the BLF7G20L/BLF7G20LS series from Ampleon. It is specifically engineered for wideband code division multiple access infrastructure. The LS variant denotes the earless flanged balanced ceramic package configuration, distinguishing it from the standard flanged version.
Consult the official Ampleon datasheet for confirmed substitute part numbers. Cross-compatibility should be verified based on pinout, package dimensions, and electrical characteristics matching the original design specifications.