BLF7G20LS-90P,118

Overview

The BLF7G20LS-90P is a dual-section LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It delivers 90 W of output power with a drain efficiency of up to 54% under continuous wave conditions at 28 V and 550 mA quiescent current. The device features a 65 V drain-source breakdown voltage, a thermal resistance from junction to case of 0.49 K/W, and an internal gate-source threshold voltage typically ranging from 1.5 V to 2.3 V. Packaged in the SOT1121B earless flanged ceramic format, it integrates ESD protection and is internally matched for simplified circuit design.

Feature Summary

• Internally matched configuration simplifies RF circuit design
• Integrated electrostatic discharge (ESD) protection
• Low thermal resistance ensures excellent thermal stability
• Optimized low memory effects for improved pre-distortability

Applications

• RF power amplifiers for base stations operating between 1805 MHz and 1880 MHz
• Multi-carrier applications in the 2110 MHz to 2170 MHz band
• Broadband operations covering 1427 MHz to 1525 MHz
• GSM EDGE signal processing requiring high linearity

Procurement Notes

Verify the specific ordering suffix against official Ampleon documentation to confirm package variations and manufacturing revisions. Ensure compliance with RoHS Directive 2002/95/EC requirements before integration. Confirm that the selected variant matches the required mounting style and lead configuration for the target application board.

Selection Notes

Select this component for designs requiring high ruggedness and low output capacitance suitable for Doherty amplifier architectures. Evaluate the thermal management strategy based on the specified 0.49 K/W junction-to-case resistance. Verify impedance matching networks using the provided typical values at 1800 MHz, 1840 MHz, and 1880 MHz for optimal performance.

Part Context

This part belongs to the BLF7G20L series of power LDMOS transistors manufactured by Ampleon. The LS designation indicates the earless flanged ceramic package version (SOT1121B), which differs mechanically from the standard flanged variant (SOT1121A). Both variants share identical electrical characteristics and are intended for wireless infrastructure power amplification.

Replacement Considerations

Consult the official Ampleon datasheet for direct cross-references within the BLF7G20L family. Verify mechanical footprint compatibility when substituting between SOT1121A and SOT1121B packages. Electrical parameters remain consistent across the series, but mounting hole configurations differ.