BLF7G20LS-90PH

Overview

The BLF7G20LS-90P is a 90 W LDMOS power transistor designed for base station applications in the frequency bands of 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz, and 2110 MHz to 2170 MHz. It operates with a drain-source voltage (VDS) of 28 V and features a maximum drain current (ID) of 18 A. The device has a drain-source breakdown voltage (V(BR)DSS) of 65 V and a thermal resistance from junction to case (Rth(j-c)) of 0.49 K/W at Tcase = 80°C and PL = 90 W. In CW operation at 1805 MHz to 1880 MHz, it delivers 84 W output power with 19 dB gain and 54% drain efficiency. For GSM EDGE signals, it provides 40 W output power with 19.5 dB gain, 41% efficiency, -61 dBc ACPR at 400 kHz, and 2.5% RMS EVM.

Feature Summary

• Excellent ruggedness capable of withstanding VSWR = 10:1 through all phases
• Low thermal resistance providing excellent thermal stability
• Lower output capacitance optimized for improved performance in Doherty applications
• Designed for low memory effects providing excellent pre-distortability

Applications

• RF power amplifiers for base stations operating in the 1427 MHz to 1525 MHz band
• Multi-carrier applications in the 1805 MHz to 1880 MHz band
• Base station RF power amplifiers in the 2110 MHz to 2170 MHz band

Procurement Notes

Verify the specific package variant required for the design. The BLF7G20L-90P uses the SOT1121A flanged ceramic package with two mounting holes, while the BLF7G20LS-90P utilizes the SOT1121B earless flanged ceramic package. Confirm that the selected component matches the mechanical constraints of the intended heat sink or chassis mounting configuration before finalizing procurement.

Selection Notes

Select this component for high-efficiency broadband operations requiring robust load mismatch tolerance. Ensure the application circuit maintains the recommended VDS of 28 V and appropriate bias currents. Consider the internal matching and integrated ESD protection when designing input and output networks. Verify thermal management capabilities to keep the junction temperature within the specified limits during peak power operation.

Part Context

This device belongs to Ampleon's portfolio of LDMOS power transistors engineered for wireless infrastructure. It is part of a series offering various power levels and frequency coverage for cellular base stations. The product line emphasizes high reliability and ease of integration into modern communication systems supporting multiple modulation standards.

Replacement Considerations

Consult official Ampleon documentation for qualified substitute part numbers. Cross-compatibility depends on matching electrical parameters such as VDS, ID, and Rth(j-c), as well as physical package dimensions like SOT1121B. Verify impedance characteristics and thermal requirements before substituting.