BLF7G21LS-160P,112

BLF7G21LS-160P,112

  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-

SKU:4bd81a34f96b Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V LDMOST
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tray
  • Technology:LDMOS
  • Frequency:1.93GHz ~ 1.99GHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):32.5A
  • Noise Figure:-
  • Current - Test:1.08 A
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1121B
  • Supplier Device Package:LDMOST
  • Configuration:Dual, Common Source

Download product information

BLF7G21LS-160P,112

Overview

The Ampleon BLF7G21LS-160P is a 160 W LDMOS power transistor designed for base station applications in the 1800 MHz to 2050 MHz frequency range, with suitability for operation at 1495 MHz to 1511 MHz. It features an earless flanged ceramic package (SOT1121B) and operates with a drain-source voltage of 28 V and a maximum junction temperature of 200 °C. The device provides typical power gain of 18 dB and drain efficiency of 34% under two-carrier W-CDMA conditions. Key electrical parameters include a drain-source breakdown voltage of 65 V, gate-source threshold voltage ranging from 1.5 V to 2.3 V, and a thermal resistance from junction to case of 0.41 K/W.

Feature Summary

  • Designed for broadband operation across the 1800 MHz to 2050 MHz frequency range
  • Features low output capacitance to improve performance in Doherty amplifier configurations
  • Incorporates internal matching and integrated ESD protection for ease of use
  • Engineered for low memory effects to facilitate excellent pre-distortability

Applications

  • RF power amplifiers for base stations operating in the 1800 MHz to 2050 MHz range
  • Multi-carrier applications utilizing W-CDMA modulation schemes
  • Operations within the 1495 MHz to 1511 MHz frequency band

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package variant and compliance status. Ensure that the procurement channel provides valid traceability for the SOT1121B ceramic package. Confirm RoHS Directive 2002/95/EC compliance through official datasheets prior to integration into production designs.

Selection Notes

Select this component for high-efficiency base station power amplification requiring robust ruggedness and low thermal resistance. Consider the SOT1121B earless flanged package for mounting constraints where standard flanges are unsuitable. Evaluate impedance data for input and output matching networks to optimize gain and efficiency within the specified 1800 MHz to 2050 MHz operational bandwidth.

Part Context

The BLF7G21LS-160P belongs to the Ampleon BLF7G21L series of LDMOS power transistors. The 'LS' designation specifically identifies the earless flanged ceramic package variant (SOT1121B), distinguishing it from the standard flanged version (SOT1121A). This series is engineered for wireless infrastructure, offering high linearity and thermal stability for demanding RF power amplifier applications.

Replacement Considerations

The BLF7G21L-160P serves as the primary alternative within the same product family, differing only in the inclusion of mounting flanges (SOT1121A vs. SOT1121B). Verify mechanical footprint compatibility before substitution. No other cross-compatible models are documented in the provided specifications.

BLF7G21LS-160P,112BLF7G21LS-160P,112

Click on the inquiry