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The BLF7G22L-160 is a 160 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1300 mA. The device delivers an average output power of 43 W with a typical power gain of 18.0 dB and a drain efficiency of 30% under two-carrier W-CDMA conditions. It features a junction-to-case thermal resistance of 0.29 K/W at Tcase = 80 °C and PL = 55 W. The component is housed in a flanged ceramic package (SOT502A) with two mounting holes.
Verify the specific package variant required, as the BLF7G22L-160 corresponds to the SOT502A flanged ceramic package with two mounting holes. Ensure compatibility with the intended PCB layout and mounting hardware specifications before procurement. Confirm RoHS compliance status if required by local regulations.
Select this component for high-efficiency RF power amplification in cellular infrastructure. Consider the internal matching network which simplifies circuit design. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Verify that the application environment supports the operating temperature limits defined in the absolute maximum ratings.
This part belongs to the BLF7G22L series of power LDMOS transistors manufactured by Ampleon USA Inc. The series includes variants such as the BLF7G22LS-160, which utilizes the SOT502B earless flanged package. These devices are engineered specifically for demanding wireless communication base station environments requiring robust performance and linearity.
The BLF7G22LS-160 serves as a direct package alternative within the same product family, differing only in the physical mounting configuration (earless vs. flanged). No other cross-manufacturer substitutes are officially documented. Designers must verify mechanical fit and electrical parameters when considering any non-official alternatives.