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The BLF7G22LS-130 is a 130 W LDMOS power transistor designed for base station applications in the 2000 MHz to 2200 MHz frequency range. It operates with a drain-source voltage of 28 V and delivers an average output power of 30 W under typical two-carrier W-CDMA conditions. The device features a junction-to-case thermal resistance of 0.35 K/W, a maximum junction temperature of 225 °C, and a drain-source breakdown voltage of 65 V. Packaged in the SOT502B earless flanged ceramic format, it includes integrated ESD protection and internal matching.
Verify the specific ordering suffix against official Ampleon documentation to ensure correct package configuration. Confirm that the component meets RoHS compliance requirements as specified in the product data sheet. Ensure proper handling procedures are followed due to the sensitivity of the LDMOS technology and integrated electrostatic discharge protection mechanisms.
Select this component for designs requiring high efficiency and low memory effects to support digital pre-distortion capabilities. Evaluate the thermal management strategy based on the 0.35 K/W junction-to-case thermal resistance rating. Consider the SOT502B package dimensions and mounting hole specifications during the mechanical design phase to ensure compatibility with the intended heat sink or chassis interface.
This part belongs to the BLF7G22L series of power LDMOS transistors manufactured by Ampleon. The 'LS' designation specifically indicates the SOT502B earless flanged ceramic package variant, distinguishing it from the standard flanged version. These devices are engineered for robust performance in wireless infrastructure environments.
Consult the official Ampleon datasheet for confirmed substitute part numbers. Verify electrical parameters and pin configurations before implementing any alternative components to maintain circuit integrity.