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The BLF7G22LS-250P,118 is a 250 W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It operates with a drain-source voltage of 28 V and a quiescent current of 1900 mA. The device delivers an average output power of 70 W with a typical power gain of 18.5 dB and a drain efficiency of 31% under two-carrier W-CDMA conditions. It features a low thermal resistance from junction to case of 0.20 K/W and withstands a load mismatch corresponding to a VSWR of 10:1.
Verify the specific ordering suffix against official Ampleon documentation to confirm package type and compliance status. Ensure that the procurement channel provides valid traceability for this component. Confirm RoHS compliance requirements align with the product specifications before finalizing orders.
Select this component for designs requiring high ruggedness and efficiency in the 2110 MHz to 2170 MHz band. Verify that the application circuit supports the specified 28 V drain-source voltage and 1900 mA quiescent current. Ensure the thermal management system can handle the junction-to-case thermal resistance of 0.20 K/W at the target power levels.
This part belongs to the BLF7G22L series of power LDMOS transistors manufactured by Ampleon. The 'S' designation indicates the earless flanged ceramic package version (SOT539B), which differs mechanically from the standard flanged version (SOT539A). Both variants share identical electrical characteristics and are intended for wireless communication infrastructure.
The BLF7G22L-250P serves as the electrically equivalent alternative within the same family, differing only in the mechanical package configuration (SOT539A versus SOT539B). No other direct substitutes are documented in the official datasheet. Cross-compatibility requires verification of mounting hole alignment and lead configurations.