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The BLF7G24L-100,112 is a high-performance LDMOS power transistor manufactured by Ampleon USA Inc. Designed for base station applications, this component operates within the frequency range of 2300 MHz to 2400 MHz. It delivers an output power of 100 W with a gain of 18 dB. The device features a rated voltage of 65 V and utilizes the SOT-502A package configuration. This RF MOSFET is engineered for high efficiency and includes integrated ESD protection mechanisms suitable for demanding wireless infrastructure environments.
Verify the specific suffix designation against official Ampleon documentation to ensure correct variant identification. Confirm that the SOT-502A package matches your thermal and mechanical design requirements. Check current product status as availability may vary due to lifecycle changes. Ensure compliance with relevant regulatory standards for the intended deployment region before finalizing procurement decisions.
Select this component when a 100 W output power level is required at 2.3–2.4 GHz frequencies. The integrated ESD feature simplifies system-level protection strategies. Consider the SOT-502A footprint for PCB layout compatibility. Evaluate thermal management solutions appropriate for high-power RF dissipation in base station enclosures.
This part belongs to the BLF7G24L series of LDMOS transistors from Ampleon. The series targets cellular base station markets requiring reliable high-power RF amplification. The '100' designation typically indicates the nominal output power capability in watts. These devices represent a segment of Ampleon's portfolio focused on improving energy efficiency in modern telecommunications networks.
Consult official Ampleon substitution guides for direct replacements. Cross-reference pinout and electrical parameters carefully if considering alternative manufacturers. Verify that any substitute maintains the 65 V rating and 100 W power capability.