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The BLF7G24LS-100 is a 100 W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It operates with a drain-source voltage of 28 V and features a typical drain efficiency of 33% under single carrier W-CDMA conditions. The device utilizes an earless flanged SOT502B package, providing a thermal resistance from junction to case of 0.3 K/W at 100 W output power. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a gate-source threshold voltage ranging from 1.5 V to 2.3 V, and a forward transconductance of 10.5 S.
Verify the specific ordering suffix against the manufacturer's current documentation to ensure correct package configuration. Confirm RoHS compliance status as required by project specifications. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability.
Select this component for designs requiring high ruggedness and low memory effects in the 2300 MHz to 2400 MHz band. Verify that the application circuit can support the specified 28 V drain-source voltage and 900 mA quiescent current. Ensure the thermal management system maintains the junction temperature within the 200 °C absolute maximum rating during operation.
This part belongs to the Ampleon BLF7G series of power LDMOS transistors. It shares the same functional profile as the BLF7G24L-100 but differs in its physical packaging. While the BLF7G24L-100 uses the SOT502A flanged ceramic package with mounting holes, the BLF7G24LS-100 utilizes the SOT502B earless flanged package.
The BLF7G24L-100 serves as a direct functional equivalent with identical electrical performance. Substitution requires verifying mechanical compatibility between the SOT502B (earless) and SOT502A (with mounting holes) packages to ensure proper mounting and grounding in the target assembly.